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Freescale Semiconductor Technical Data
Document Number: MRF6VP11KH Rev. 0, 1/2008
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed primarily for pulsed wideband applications with frequencies up to 150 MHz. Device is unmatched and is suitable for use in industrial, medical and scientific applications. * Typical Pulsed Performance at 130 MHz: VDD = 50 Volts, IDQ = 150 mA, Pout = 1000 Watts Peak, Pulse Width = 100 sec, Duty Cycle = 20% Power Gain -- 26 dB Drain Efficiency -- 71% * Capable of Handling 10:1 VSWR, @ 50 Vdc, 130 MHz, 1000 Watts Peak Power Features * Qualified Up to a Maximum of 50 VDD Operation * Integrated ESD Protection * Excellent Thermal Stability * Designed for Push - Pull Operation * Greater Negative Gate - Source Voltage Range for Improved Class C Operation * RoHS Compliant * In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
MRF6VP11KHR6
10 - 150 MHz, 1000 W, 50 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET
CASE 375D - 05, STYLE 1 NI - 1230 PART IS PUSH - PULL
RFinA/VGSA 3
1 RFoutA/VDSA
RFinB/VGSB 4
2 RFoutB/VDSB
(Top View)
Figure 1. Pin Connections Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS Tstg TC TJ Value - 0.5, +110 - 6.0, +10 - 65 to +150 150 200 Unit Vdc Vdc C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 1000 W Pulsed, 100 sec Pulse Width, 20% Duty Cycle Symbol RJC Value (1,2) 0.03 Unit C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2008. All rights reserved.
MRF6VP11KHR6 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 2 (Minimum) A (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics
(1)
Symbol IGSS V(BR)DSS IDSS IDSS
Min -- 110 -- --
Typ -- -- -- --
Max 10 -- 100 5
Unit Adc Vdc Adc mA
Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain - Source Breakdown Voltage (ID = 300 mA, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 100 Vdc, VGS = 0 Vdc) On Characteristics Gate Threshold Voltage (1) (VDS = 10 Vdc, ID = 1600 Adc) Gate Quiescent Voltage (2) (VDD = 50 Vdc, ID = 150 mAdc, Measured in Functional Test) Drain - Source On - Voltage (1) (VGS = 10 Vdc, ID = 4 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz)
VGS(th) VGS(Q) VDS(on)
1 1.5 --
1.63 2.2 0.28
3 3.5 --
Vdc Vdc Vdc
Crss Coss Ciss
-- -- --
3.3 147 506
-- -- --
pF pF pF
Functional Tests (2) (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak (200 W Avg.), f = 130 MHz, 100 sec Pulse Width, 20% Duty Cycle Power Gain Drain Efficiency Input Return Loss 1. Each side of device measured separately. 2. Measurement made with device in push - pull configuration. Gps D IRL 24 69 -- 26 71 - 16 28 -- -9 dB % dB
MRF6VP11KHR6 2 RF Device Data Freescale Semiconductor
VBIAS + C1 + C2 +
B1
R2 L1 R1 L3 C4 C5 C6 C7 C8 C9 C10 C11 C21 Z10 C13 C14 C15 + +
VSUPPLY +
C3
C16 C17 C18 C19 C20
Z8 Z4 RF INPUT Z6
Z12
Z14
Z16 RF OUTPUT
Z1
Z2 L2
Z3 J1 Z5 C12 T1 C22 Z7 Z9 Z11 Z13 Z15 Z17 T2 DUT C23 C24 C25 J2
Z18
Z19
C26
Z1 Z2* Z3* Z4, Z5 Z6, Z7, Z8, Z9 Z10, Z11 Z12, Z13
0.175 1.461 0.080 0.133 0.500 0.102 0.206
x 0.082 x 0.082 x 0.082 x 0.193 x 0.518 x 0.253 x 0.253
Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip
Z14, Z15 Z16*, Z17* Z18 Z19 PCB
0.116 x 0.253 Microstrip 0.035 x 0.253 Microstrip 0.275 x 0.082 Microstrip 0.845 x 0.082 Microstrip Arlon CuClad 250GX - 0300 - 55 - 22, 0.030, r = 2.55
*Line length includes microstrip bends.
Figure 2. MRF6VP11KHR6 Test Circuit Schematic
Table 5. MRF6VP11KHR6 Test Circuit Component Designations and Values
Part B1 C1 C2 C3 C4, C9, C17 C5, C16 C6, C15 C7 C8 C10, C11, C13, C14 C12 C18, C19, C20 C21, C22 C23 C24, C25 C26 J1, J2 L1 L2 L3* R1 R2 T1 T2 *L3 is wrapped around R2. Description 95 , 100 MHz Long Ferrite Bead 47 F, 50 V Electrolytic Capacitor 22 F, 35 V Tantalum Capacitor 10 F, 35 V Tantalum Capacitor 10K pF Chip Capacitors 20K pF Chip Capacitors 0.1 F, 50 V Chip Capacitors 2.2 F, 50 V Chip Capacitor 0.22 F, 100 V Chip Capacitor 1000 pF Chip Capacitors 18 pF Chip Capacitor 470 F, 63 V Electrolytic Capacitors 47 pF Chip Capacitors 75 pF Chip Capacitor 100 pF Chip Capacitors 33 pF Chip Capacitor Jumpers from PCB to T1 and T2 82 nH Inductor 47 nH Inductor 10 Turn, #18AWG Inductor, Handwound 1 K, 1/4 W Chip Resistor 20 , 3 W Chip Resistor Balun Balun Part Number 2743021447 476KXM050M T491X226K035AT T491D106K035AT ATC200B103KT50XT ATC200B203KT50XT CDR33BX104AKYS C1825C225J5RAC C1825C223K1GAC ATC100B102JT50XT ATC100B180JT500XT EKME630ELL471MK25S ATC100B470JT500XT ATC100B750JT500XT ATC100B101JT500XT ATC100B330JT500XT Copper Foil 1812SMS - 82NJLC 1812SMS - 47NJLC Copper Wire PTF561K0000BYEK 5093NW20R00J TUI - 9 TUO - 4 Vishay Vishay Comm Concepts Comm Concepts CoilCraft CoilCraft Manufacturer Fair - Rite Illinois Cap Kemet Kemet ATC ATC Kemet Kemet Kemet ATC ATC Multicomp ATC ATC ATC ATC
MRF6VP11KHR6 RF Device Data Freescale Semiconductor 3
C1
C19 C17 C16 C15
B1 L1
C4 C5 C6
C18
C2 C3 C7 C8 C9 C11
C20 C14 L3, R2*
R1 C10 J1 C21 T1 C24
C13 T2 C25 J2
L2 C12
CUT OUT AREA
C23 C22
C26
MRF6VP11KH Rev. 3
* L3 is wrapped around R2.
Figure 3. MRF6VP11KHR6 Test Circuit Component Layout
MRF6VP11KHR6 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
1000 Ciss TJ = 200C ID, DRAIN CURRENT (AMPS) C, CAPACITANCE (pF) Coss 100 Measured with 30 mV(rms)ac @ 1 MHz VGS = 0 Vdc TJ = 175C TJ = 150C 10 100
10
Crss
TC = 25C 1 0 10 20 30 40 50 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 1 1 10 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 100 200
Figure 4. Capacitance versus Drain - Source Voltage
27 26 Gps, POWER GAIN (dB) 25 24 23 22 21 20 10 VDD = 50 Vdc, IDQ = 150 mA, f = 130 MHz Pulse Width = 100 sec, Duty Cycle = 20% 100 Pout, OUTPUT POWER (WATTS) PULSED 1000 Gps 80 70 D, DRAIN EFFICIENCY (%) Pout, OUTPUT POWER (dBm) 60 50 40 30 20 65 64 63
Figure 5. DC Safe Operating Area
P3dB = 61.23 dBm (1327.39 W) P1dB = 60.57 dBm (1140.24 W)
Ideal
62 61 60 59 58 57 56 30 31 32 33 VDD = 50 Vdc, IDQ = 150 mA, f = 130 MHz Pulse Width = 100 sec, Duty Cycle = 20% 34 35 36 37 38 39 Actual
D
10 2000
Pin, INPUT POWER (dBm) PULSED
Figure 6. Pulsed Power Gain and Drain Efficiency versus Output Power
32 IDQ = 6000 mA Gps, POWER GAIN (dB) Gps, POWER GAIN (dB) 28 3600 mA 1500 mA 750 mA 24 150 mA 20 VDD = 50 Vdc, f = 130 MHz Pulse Width = 100 sec, Duty Cycle = 20% 16 10 100 Pout, OUTPUT POWER (WATTS) PULSED 1000 2000 12 0 375 mA 24 28
Figure 7. Pulsed Output Power versus Input Power
20 VDD = 30 V 16 IDQ = 150 mA, f = 130 MHz Pulse Width = 100 sec Duty Cycle = 20% 200 400 600 800 1000 1200 1400 1600 35 V 40 V 45 V 50 V
Pout, OUTPUT POWER (WATTS) PULSED
Figure 8. Pulsed Power Gain versus Output Power
Figure 9. Pulsed Power Gain versus Output Power
MRF6VP11KHR6 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
65 TC = -30_C Gps, POWER GAIN (dB) 25_C 55 VDD = 50 Vdc IDQ = 150 mA f = 130 MHz Pulse Width = 100 sec Duty Cycle = 20% 25 30 35 40 45 85_C 27 TC = -30_C 26 25 24 Gps 23 22 21 20 10 D 40 VDD = 50 Vdc IDQ = 150 mA f = 130 MHz Pulse Width = 100 sec Duty Cycle = 20% 1000 30 20 25_C 85_C 50 70 60 D, DRAIN EFFICIENCY (%) Pout, OUTPUT POWER (dBm) 60 80
50
45 20
100 Pout, OUTPUT POWER (WATTS) PULSED
10 2000
Pin, INPUT POWER (dBm) PULSED
Figure 10. Pulsed Output Power versus Input Power
107
Figure 11. Pulsed Power Gain and Drain Efficiency versus Output Power
MTTF (HOURS)
106
105
104 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 50 Vdc, Pout = 1000 W Peak, Pulse Width = 100 sec, Duty Cycle = 20%, and D = 71%. MTTF calculator available at http:/www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
Figure 12. MTTF versus Junction Temperature
MRF6VP11KHR6 6 RF Device Data Freescale Semiconductor
f = 130 MHz Zsource
Zo = 10
f = 130 MHz
Zload
VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak f MHz 130 Zsource W 1.58 + j6.47 Zload W 4.6 + j1.85
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network
Input Matching Network
Device Under Test
Z
source
Z
load
Figure 13. Series Equivalent Source and Load Impedance
MRF6VP11KHR6 RF Device Data Freescale Semiconductor 7
PACKAGE DIMENSIONS
MRF6VP11KHR6 8 RF Device Data Freescale Semiconductor
MRF6VP11KHR6 RF Device Data Freescale Semiconductor 9
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date Jan. 2008 * Initial Release of Data Sheet Description
MRF6VP11KHR6 10 RF Device Data Freescale Semiconductor
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MRF6VP11KHR6
Document Number: RF Device Data MRF6VP11KH Rev. 0, 1/2008 Freescale Semiconductor
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